Improved GaAs nanowire solar cells using AlGaAs for surface passivation
Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-c...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Conference item |
| Published: |
2012
|
| _version_ | 1797096209908760576 |
|---|---|
| author | Lee, Y Li, Z Fu, L Parkinson, P Vora, K Tan, H Jagadish, C |
| author_facet | Lee, Y Li, Z Fu, L Parkinson, P Vora, K Tan, H Jagadish, C |
| author_sort | Lee, Y |
| collection | OXFORD |
| description | Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs. © 2012 IEEE. |
| first_indexed | 2024-03-07T04:38:49Z |
| format | Conference item |
| id | oxford-uuid:d0e6bec0-dbc8-42a4-b020-61345562d669 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T04:38:49Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:d0e6bec0-dbc8-42a4-b020-61345562d6692022-03-27T07:53:25ZImproved GaAs nanowire solar cells using AlGaAs for surface passivationConference itemhttp://purl.org/coar/resource_type/c_5794uuid:d0e6bec0-dbc8-42a4-b020-61345562d669Symplectic Elements at Oxford2012Lee, YLi, ZFu, LParkinson, PVora, KTan, HJagadish, CSemiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs. © 2012 IEEE. |
| spellingShingle | Lee, Y Li, Z Fu, L Parkinson, P Vora, K Tan, H Jagadish, C Improved GaAs nanowire solar cells using AlGaAs for surface passivation |
| title | Improved GaAs nanowire solar cells using AlGaAs for surface passivation |
| title_full | Improved GaAs nanowire solar cells using AlGaAs for surface passivation |
| title_fullStr | Improved GaAs nanowire solar cells using AlGaAs for surface passivation |
| title_full_unstemmed | Improved GaAs nanowire solar cells using AlGaAs for surface passivation |
| title_short | Improved GaAs nanowire solar cells using AlGaAs for surface passivation |
| title_sort | improved gaas nanowire solar cells using algaas for surface passivation |
| work_keys_str_mv | AT leey improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation AT liz improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation AT ful improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation AT parkinsonp improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation AT vorak improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation AT tanh improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation AT jagadishc improvedgaasnanowiresolarcellsusingalgaasforsurfacepassivation |