Atom probe tomography of crystallographic defects in silicon

<p>High performance multicrystalline silicon (HPMC-Si) is the dominant material used in photovoltaic (PV) devices. This material however contains a large number of defects, such as grain boundaries and dislocations. The decoration of such defects by transition metals and other impurities cause...

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Dades bibliogràfiques
Autor principal: Tweddle, D
Altres autors: Moody, M
Format: Thesis
Publicat: 2019
Matèries: