Atom probe tomography of crystallographic defects in silicon
<p>High performance multicrystalline silicon (HPMC-Si) is the dominant material used in photovoltaic (PV) devices. This material however contains a large number of defects, such as grain boundaries and dislocations. The decoration of such defects by transition metals and other impurities cause...
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Thesis |
| 出版: |
2019
|
| 主題: |