Optoelectronic properties of tin-lead halide perovskites
Mixed tin–lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated...
| Egile Nagusiak: | , , |
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| Formatua: | Journal article |
| Hizkuntza: | English |
| Argitaratua: |
American Chemical Society
2021
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| _version_ | 1826298300743024640 |
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| author | Savill, KJ Ulatowski, AM Herz, LM |
| author_facet | Savill, KJ Ulatowski, AM Herz, LM |
| author_sort | Savill, KJ |
| collection | OXFORD |
| description | Mixed tin–lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated mechanisms. We show that from a fundamental perspective, increasing tin fraction may cause increases in attainable charge-carrier mobilities, decreases in exciton binding energies, and potentially a slowing of charge-carrier cooling, all beneficial for photovoltaic applications. We discuss the mechanisms leading to significant bandgap bowing along the tin–lead series, which enables attractive near-infrared bandgaps at intermediate tin content. However, tin-rich stoichiometries still suffer from tin oxidation and vacancy formation which often obscures the fundamentally achievable performance, causing high background hole densities, accelerating charge-carrier recombination, lowering charge-carrier mobilities, and blue-shifting absorption onsets through the Burstein–Moss effect. We evaluate impacts on photovoltaic device performance, and conclude with an outlook on remaining challenges and promising future directions in this area. |
| first_indexed | 2024-03-07T04:44:44Z |
| format | Journal article |
| id | oxford-uuid:d2d9a859-b63e-4f78-988c-b2c1996841eb |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T04:44:44Z |
| publishDate | 2021 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:d2d9a859-b63e-4f78-988c-b2c1996841eb2022-03-27T08:07:05ZOptoelectronic properties of tin-lead halide perovskitesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d2d9a859-b63e-4f78-988c-b2c1996841ebEnglishSymplectic ElementsAmerican Chemical Society2021Savill, KJUlatowski, AMHerz, LMMixed tin–lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated mechanisms. We show that from a fundamental perspective, increasing tin fraction may cause increases in attainable charge-carrier mobilities, decreases in exciton binding energies, and potentially a slowing of charge-carrier cooling, all beneficial for photovoltaic applications. We discuss the mechanisms leading to significant bandgap bowing along the tin–lead series, which enables attractive near-infrared bandgaps at intermediate tin content. However, tin-rich stoichiometries still suffer from tin oxidation and vacancy formation which often obscures the fundamentally achievable performance, causing high background hole densities, accelerating charge-carrier recombination, lowering charge-carrier mobilities, and blue-shifting absorption onsets through the Burstein–Moss effect. We evaluate impacts on photovoltaic device performance, and conclude with an outlook on remaining challenges and promising future directions in this area. |
| spellingShingle | Savill, KJ Ulatowski, AM Herz, LM Optoelectronic properties of tin-lead halide perovskites |
| title | Optoelectronic properties of tin-lead halide perovskites |
| title_full | Optoelectronic properties of tin-lead halide perovskites |
| title_fullStr | Optoelectronic properties of tin-lead halide perovskites |
| title_full_unstemmed | Optoelectronic properties of tin-lead halide perovskites |
| title_short | Optoelectronic properties of tin-lead halide perovskites |
| title_sort | optoelectronic properties of tin lead halide perovskites |
| work_keys_str_mv | AT savillkj optoelectronicpropertiesoftinleadhalideperovskites AT ulatowskiam optoelectronicpropertiesoftinleadhalideperovskites AT herzlm optoelectronicpropertiesoftinleadhalideperovskites |