Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition

We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires....

Full description

Bibliographic Details
Main Authors: Joyce, H, Kim, Y, Gao, Q, Tan, H, Jagadish, C
Format: Conference item
Published: 2007
_version_ 1797096845772587008
author Joyce, H
Kim, Y
Gao, Q
Tan, H
Jagadish, C
author_facet Joyce, H
Kim, Y
Gao, Q
Tan, H
Jagadish, C
author_sort Joyce, H
collection OXFORD
description We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth. © 2007 IEEE.
first_indexed 2024-03-07T04:47:20Z
format Conference item
id oxford-uuid:d3bebbb3-240a-4727-9aff-e38c763d5ad5
institution University of Oxford
last_indexed 2024-03-07T04:47:20Z
publishDate 2007
record_format dspace
spelling oxford-uuid:d3bebbb3-240a-4727-9aff-e38c763d5ad52022-03-27T08:13:30ZGrowth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor depositionConference itemhttp://purl.org/coar/resource_type/c_5794uuid:d3bebbb3-240a-4727-9aff-e38c763d5ad5Symplectic Elements at Oxford2007Joyce, HKim, YGao, QTan, HJagadish, CWe have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth. © 2007 IEEE.
spellingShingle Joyce, H
Kim, Y
Gao, Q
Tan, H
Jagadish, C
Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
title Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
title_full Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
title_fullStr Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
title_full_unstemmed Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
title_short Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
title_sort growth of iii v nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
work_keys_str_mv AT joyceh growthofiiivnanowiresandnanowireheterostructuresbymetalorganicchemicalvapordeposition
AT kimy growthofiiivnanowiresandnanowireheterostructuresbymetalorganicchemicalvapordeposition
AT gaoq growthofiiivnanowiresandnanowireheterostructuresbymetalorganicchemicalvapordeposition
AT tanh growthofiiivnanowiresandnanowireheterostructuresbymetalorganicchemicalvapordeposition
AT jagadishc growthofiiivnanowiresandnanowireheterostructuresbymetalorganicchemicalvapordeposition