Imaging localized energy states in silicon-doped InGaN nanowires using 4D electron microscopy
Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, thorough knowledge of ultrafast dynamical processes at the surface and interfa...
| Autores principales: | , , , , , , , , , , , , , , , |
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| Formato: | Journal article |
| Publicado: |
American Chemical Society
2018
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