Imaging localized energy states in silicon-doped InGaN nanowires using 4D electron microscopy

Imaging localized energy states in silicon-doped InGaN nanowires using 4D electron microscopy

Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, thorough knowledge of ultrafast dynamical processes at the surface and interfa...

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Chi tiết về thư mục
Những tác giả chính: Bose, R, Adhikari, A, Burlakov, V, Liu, G, Haque, M, Priante, D, Hedhili, M, Wehbe, N, Zhao, C, Yang, H, Ng, T, Goriely, A, Bakr, O, Wu, T, Ooi, B, Mohammed, O
Định dạng: Journal article
Được phát hành: American Chemical Society 2018

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