Thermally deposited lead oxides for thin film photovoltaics
Lead oxide is demonstrated for the first time as the active layer in a Schottky junction photovoltaic device. Thin films of lead were thermally deposited and oxidised to produce polycrystalline films of lead oxide. Different heat treatments yield variations in the ratio of orthorhombic to tetragonal...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
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2012
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| _version_ | 1797097153236041728 |
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| author | Droessler, L Assender, H Watt, A |
| author_facet | Droessler, L Assender, H Watt, A |
| author_sort | Droessler, L |
| collection | OXFORD |
| description | Lead oxide is demonstrated for the first time as the active layer in a Schottky junction photovoltaic device. Thin films of lead were thermally deposited and oxidised to produce polycrystalline films of lead oxide. Different heat treatments yield variations in the ratio of orthorhombic to tetragonal lead oxide that lead to different device performances, where devices with a higher content of orthorhombic PbO show higher power conversion efficiencies of up to 0.17%. Efficiencies are limited by low short circuit currents and further improvements are expected through increased film homogeneity and grain size as well as the implementation of suitable blocking layers to stop current leakage. © 2011 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-07T04:51:29Z |
| format | Journal article |
| id | oxford-uuid:d51d1342-88e9-40ac-9556-bb651c22f221 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T04:51:29Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:d51d1342-88e9-40ac-9556-bb651c22f2212022-03-27T08:23:37ZThermally deposited lead oxides for thin film photovoltaicsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d51d1342-88e9-40ac-9556-bb651c22f221EnglishSymplectic Elements at Oxford2012Droessler, LAssender, HWatt, ALead oxide is demonstrated for the first time as the active layer in a Schottky junction photovoltaic device. Thin films of lead were thermally deposited and oxidised to produce polycrystalline films of lead oxide. Different heat treatments yield variations in the ratio of orthorhombic to tetragonal lead oxide that lead to different device performances, where devices with a higher content of orthorhombic PbO show higher power conversion efficiencies of up to 0.17%. Efficiencies are limited by low short circuit currents and further improvements are expected through increased film homogeneity and grain size as well as the implementation of suitable blocking layers to stop current leakage. © 2011 Elsevier B.V. All rights reserved. |
| spellingShingle | Droessler, L Assender, H Watt, A Thermally deposited lead oxides for thin film photovoltaics |
| title | Thermally deposited lead oxides for thin film photovoltaics |
| title_full | Thermally deposited lead oxides for thin film photovoltaics |
| title_fullStr | Thermally deposited lead oxides for thin film photovoltaics |
| title_full_unstemmed | Thermally deposited lead oxides for thin film photovoltaics |
| title_short | Thermally deposited lead oxides for thin film photovoltaics |
| title_sort | thermally deposited lead oxides for thin film photovoltaics |
| work_keys_str_mv | AT droesslerl thermallydepositedleadoxidesforthinfilmphotovoltaics AT assenderh thermallydepositedleadoxidesforthinfilmphotovoltaics AT watta thermallydepositedleadoxidesforthinfilmphotovoltaics |