Electron transport in modulation-doped GaAs v-groove quantum wires
We report the growth of modulation-doped GaAs/AlxGa1-xAs v-groove quantum wires and structural, electrical and optical investigations of their electronic states and transport properties. By using alternative group III precursors on partially SiO2 masked pre-patterned GaAs substrates, samples have be...
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Elsevier
2000
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| Shrnutí: | We report the growth of modulation-doped GaAs/AlxGa1-xAs v-groove quantum wires and structural, electrical and optical investigations of their electronic states and transport properties. By using alternative group III precursors on partially SiO2 masked pre-patterned GaAs substrates, samples have been fabricated which permit electrical measurements of single isolated wire structures without the need for additional electron-beam lithography. Magneto-transport was measured as a function of tilt angle of the incident magnetic field to identify the formation of low-dimensional electron gases in different parts of the structure. Photoluminescence investigations reveal ID and 2D confined states which show different carrier heating when electric fields are applied along the wire structure. (C) 2000 Elsevier Science B.V, All rights reserved. |
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