The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (epsilon perpendicular to in GexSi1-x/Si strained l...
| Үндсэн зохиолчид: | , , , , |
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| Формат: | Conference item |
| Хэвлэсэн: |
1996
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