The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures

The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures

Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (epsilon perpendicular to in GexSi1-x/Si strained l...

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Bibliographic Details
Main Authors:	Glasko, J, Zou, J, Cockayne, D, Gerald, J, Elliman, R
Format:	Conference item
Published:	1996

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