SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS
We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pul...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1995
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