Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS
The preparation of clean GaN surfaces is necessary in order to study the fundamental properties of GaN surfaces, a subject of increasing scientific and industrial relevance. Here, we identify the effect of two common surface cleaning treatments (annealing in ammonia, and sputtering in nitrogen follo...
| Hoofdauteurs: | , , , , , |
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| Formaat: | Journal article |
| Taal: | English |
| Gepubliceerd in: |
2004
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| _version_ | 1826299289572212736 |
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| author | Oliver, R Nörenberg, C Martin, MG Crossley, A Castell, MR Briggs, G |
| author_facet | Oliver, R Nörenberg, C Martin, MG Crossley, A Castell, MR Briggs, G |
| author_sort | Oliver, R |
| collection | OXFORD |
| description | The preparation of clean GaN surfaces is necessary in order to study the fundamental properties of GaN surfaces, a subject of increasing scientific and industrial relevance. Here, we identify the effect of two common surface cleaning treatments (annealing in ammonia, and sputtering in nitrogen followed by in vacua annealing) on surface reconstruction, morphology and stoichiometry of both A- and B-type GaN, by employing a combination of in situ RHEED and STM, and ex situ XPS, and illustrate the contrasting behaviours of the two surface polarities. |
| first_indexed | 2024-03-07T04:59:39Z |
| format | Journal article |
| id | oxford-uuid:d7d815d5-ff0c-4524-8927-30bfcea5db13 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T04:59:39Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:d7d815d5-ff0c-4524-8927-30bfcea5db132022-03-27T08:44:02ZCommon methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPSJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d7d815d5-ff0c-4524-8927-30bfcea5db13EnglishSymplectic Elements at Oxford2004Oliver, RNörenberg, CMartin, MGCrossley, ACastell, MRBriggs, GThe preparation of clean GaN surfaces is necessary in order to study the fundamental properties of GaN surfaces, a subject of increasing scientific and industrial relevance. Here, we identify the effect of two common surface cleaning treatments (annealing in ammonia, and sputtering in nitrogen followed by in vacua annealing) on surface reconstruction, morphology and stoichiometry of both A- and B-type GaN, by employing a combination of in situ RHEED and STM, and ex situ XPS, and illustrate the contrasting behaviours of the two surface polarities. |
| spellingShingle | Oliver, R Nörenberg, C Martin, MG Crossley, A Castell, MR Briggs, G Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS |
| title | Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS |
| title_full | Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS |
| title_fullStr | Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS |
| title_full_unstemmed | Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS |
| title_short | Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS |
| title_sort | common methods for the preparation of clean a and b type gan surfaces assessed by stm rheed and xps |
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