Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS

Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS

Show other versions (1)

The preparation of clean GaN surfaces is necessary in order to study the fundamental properties of GaN surfaces, a subject of increasing scientific and industrial relevance. Here, we identify the effect of two common surface cleaning treatments (annealing in ammonia, and sputtering in nitrogen follo...

Fuld beskrivelse

Bibliografiske detaljer
Main Authors:	Oliver, R, Nörenberg, C, Martin, MG, Crossley, A, Castell, MR, Briggs, G
Format:	Journal article
Sprog:	English
Udgivet:	2004

Lignende værker

Common methods for the preparation of clean A- and B-type GaN surfaces assessed by STM, RHEED and XPS
af: Oliver, R, et al.
Udgivet: (2003)

Stranski-Krastanov growth of InN nanostructures on GaN studied by RHEED, STM and AFM
af: Norenberg, C, et al.
Udgivet: (2002)

The surface structure of CeO2(110) single crystals studied by STM and RHEED
af: Norenberg, H, et al.
Udgivet: (1999)

Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study
af: Norenberg, C, et al.
Udgivet: (2001)

Visualization of precipitation induced crystallographic shear planes as one-dimensional structures on surfaces: an STM and RHEED study on TiO2(110)
af: Norenberg, H, et al.
Udgivet: (1998)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
af: Goldfarb, I, et al.
Udgivet: (1999)

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and <it>in situ </it>RHEED
af: Arapkina Larisa, et al.
Udgivet: (2011-01-01)

Heteroepitaxial growth of InN islands studied by STM and AFM
af: Norenberg, C, et al.
Udgivet: (2002)

Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy
af: Oliver, R, et al.
Udgivet: (2003)

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
af: D. Broxtermann, et al.
Udgivet: (2012-03-01)

Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy
af: Oliver, R, et al.
Udgivet: (2003)

Defect formation on CeO2(111) surfaces after annealing studied by STM
af: Norenberg, H, et al.
Udgivet: (1999)

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO3(001)
af: Marshall, M, et al.
Udgivet: (2011)

An elevated temperature STM study of the Si(001) c(4x4) surface reconstruction
af: Norenberg, H, et al.
Udgivet: (1999)

Surface structure of CeO2(111) studied by low current STM and electron diffraction
af: Norenberg, H, et al.
Udgivet: (1998)

Surface structure of the most oxygen deficient Magneli phase - an STM study of Ti4O7
af: Norenberg, H, et al.
Udgivet: (1998)

An STM study of the UO2(001) surface
af: Muggelberg, C, et al.
Udgivet: (1999)

Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
af: Norenberg, H, et al.
Udgivet: (1998)

Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
af: Shuoyang Qiu, et al.
Udgivet: (2023-05-01)

Update 2.0 to rheed++: A complex computer model for dynamical one-beam calculations of RHEED intensity oscillations
af: Andrzej Daniluk
Udgivet: (2022-06-01)

The surface structure of TiO2(001) after high temperature annealing studied by AFM, STM, and optical microscopy
af: Norenberg, H, et al.
Udgivet: (2000)

Automation of in-situ RHEED analysis by LabView
af: Tan, San San.
Udgivet: (2009)

Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM
af: Leigh, D, et al.
Udgivet: (2007)

Imaging insulating oxides by elevated-temperature STM
af: Castell, M, et al.
Udgivet: (1998)

Thermally Induced Surface Structure and Morphology Evolution in Bimetallic Pt-Au/HOPG Nanoparticles as Probed Using XPS and STM
af: Alexey Yu. Fedorov, et al.
Udgivet: (2023-12-01)

Growth modes in heteroepitaxy of InGaN on GaN
af: Oliver, R, et al.
Udgivet: (2005)

Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM
af: Leigh, D, et al.
Udgivet: (2007)

STM and STS of oxide ultrathin films
af: Castell, M
Udgivet: (2018)

The Identity of the Herb ‘Todda–Vaddi’in Van Rheede’s Hortus Malabaricus
af: Jisha Daniel, et al.
Udgivet: (2021-09-01)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
af: Oliver, R, et al.
Udgivet: (2004)

The atomic structure of the UO2 (111) surface and the effects of additional surface oxygen studied by elevated temperature STM
af: Muggelberg, C, et al.
Udgivet: (1998)

Nanostructures on the SrTiO3(001) surface studied by STM
af: Castell, M
Udgivet: (2002)

Unexpected differences in the surface electronic structure of NiO and CoO observed by STM and explained by first-principles theory
af: Castell, M, et al.
Udgivet: (1999)

The atomic structure of the UO2+x(110) surface and the effects of interstitial oxygen: an elevated-temperature STM study
af: Muggelberg, C, et al.
Udgivet: (1998)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
af: Kyaw, Zabu, et al.
Udgivet: (2014)

RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite
af: Kirill A. Lozovoy, et al.
Udgivet: (2024-04-01)

Nucleation and growth of GaN/AlN quantum dots
af: Adelmann, C, et al.
Udgivet: (2004)

The efficacy of XP-endo shaper (XPS) in cleaning the apical third of the root canal
af: Živković Slavoljub, et al.
Udgivet: (2017-01-01)

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
af: Weiyi Jin, et al.
Udgivet: (2024-09-01)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
af: Sun, Xiaowei, et al.
Udgivet: (2013)