Common methods for the preparation of clean A- And B-type GaN surfaces assessed by STM, RHEED and XPS
The preparation of clean GaN surfaces is necessary in order to study the fundamental properties of GaN surfaces, a subject of increasing scientific and industrial relevance. Here, we identify the effect of two common surface cleaning treatments (annealing in ammonia, and sputtering in nitrogen follo...
Հիմնական հեղինակներ: | Oliver, R, Nörenberg, C, Martin, MG, Crossley, A, Castell, MR, Briggs, G |
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Ձևաչափ: | Journal article |
Լեզու: | English |
Հրապարակվել է: |
2004
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Նմանատիպ նյութեր
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Common methods for the preparation of clean A- and B-type GaN surfaces assessed by STM, RHEED and XPS
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Հրապարակվել է: (2003) -
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The surface structure of CeO2(110) single crystals studied by STM and RHEED
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Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study
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Հրապարակվել է: (2001) -
Visualization of precipitation induced crystallographic shear planes as one-dimensional structures on surfaces: an STM and RHEED study on TiO2(110)
: Norenberg, H, և այլն
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