Extremely low surface recombination in 1 Ω cm n-type monocrystalline silicon
A key requirement in the recent development of highly efficient silicon solar cells is the outstanding passivation of their surfaces. In this work, plasma enhanced chemical vapour deposition of a triple layer dielectric consisting of amorphous silicon, silicon oxide and silicon nitride, charged extr...
| Main Authors: | , , , |
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| 格式: | Journal article |
| 出版: |
Wiley
2016
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