Critical-current suppression in sub-micron intrinsic Josephson junction arrays
We present experimental results on intrinsic Josephson junctions fabricated by three-dimensional gallium focussed-ion-beam (FIB) milling in c-axis-oriented Tl2Ba2CaCu2O8 thin films. We report measurements of the dependence of the switching current density of these arrays at 4.2 K upon the junction c...
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| Format: | Conference item |
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2006
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| _version_ | 1797097905260068864 |
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| author | Fenton, J Korsah, M Grovenor, C Warburton, P |
| author_facet | Fenton, J Korsah, M Grovenor, C Warburton, P |
| author_sort | Fenton, J |
| collection | OXFORD |
| description | We present experimental results on intrinsic Josephson junctions fabricated by three-dimensional gallium focussed-ion-beam (FIB) milling in c-axis-oriented Tl2Ba2CaCu2O8 thin films. We report measurements of the dependence of the switching current density of these arrays at 4.2 K upon the junction cross-sectional area A showing strong suppression of the switching current density for junctions with A 1 νm2; the switching current extrapolates to zero for A ∼ 0.25 νm2. We discuss the roles of gallium ion implantation and both thermal and quantum fluctuations in this current suppression. We also present in-situ IV measurements demonstrating the use of a liquid-helium-cooled sample stage in conjunction with the FIB milling. © 2006 IOP Publishing Ltd. |
| first_indexed | 2024-03-07T05:01:59Z |
| format | Conference item |
| id | oxford-uuid:d89284f8-7edf-4fab-9749-721cdf0f1a98 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:01:59Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:d89284f8-7edf-4fab-9749-721cdf0f1a982022-03-27T08:49:51ZCritical-current suppression in sub-micron intrinsic Josephson junction arraysConference itemhttp://purl.org/coar/resource_type/c_5794uuid:d89284f8-7edf-4fab-9749-721cdf0f1a98Symplectic Elements at Oxford2006Fenton, JKorsah, MGrovenor, CWarburton, PWe present experimental results on intrinsic Josephson junctions fabricated by three-dimensional gallium focussed-ion-beam (FIB) milling in c-axis-oriented Tl2Ba2CaCu2O8 thin films. We report measurements of the dependence of the switching current density of these arrays at 4.2 K upon the junction cross-sectional area A showing strong suppression of the switching current density for junctions with A 1 νm2; the switching current extrapolates to zero for A ∼ 0.25 νm2. We discuss the roles of gallium ion implantation and both thermal and quantum fluctuations in this current suppression. We also present in-situ IV measurements demonstrating the use of a liquid-helium-cooled sample stage in conjunction with the FIB milling. © 2006 IOP Publishing Ltd. |
| spellingShingle | Fenton, J Korsah, M Grovenor, C Warburton, P Critical-current suppression in sub-micron intrinsic Josephson junction arrays |
| title | Critical-current suppression in sub-micron intrinsic Josephson junction arrays |
| title_full | Critical-current suppression in sub-micron intrinsic Josephson junction arrays |
| title_fullStr | Critical-current suppression in sub-micron intrinsic Josephson junction arrays |
| title_full_unstemmed | Critical-current suppression in sub-micron intrinsic Josephson junction arrays |
| title_short | Critical-current suppression in sub-micron intrinsic Josephson junction arrays |
| title_sort | critical current suppression in sub micron intrinsic josephson junction arrays |
| work_keys_str_mv | AT fentonj criticalcurrentsuppressioninsubmicronintrinsicjosephsonjunctionarrays AT korsahm criticalcurrentsuppressioninsubmicronintrinsicjosephsonjunctionarrays AT grovenorc criticalcurrentsuppressioninsubmicronintrinsicjosephsonjunctionarrays AT warburtonp criticalcurrentsuppressioninsubmicronintrinsicjosephsonjunctionarrays |