Studies on etching and polymer deposition in halocarbon plasmas
<p>Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processe...
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| Format: | Thesis |
| Language: | English |
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1987
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| _version_ | 1826299515797241856 |
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| author | Astell-Burt, P Astell-Burt, Peter J. |
| author2 | Cheetham, A |
| author_facet | Cheetham, A Astell-Burt, P Astell-Burt, Peter J. |
| author_sort | Astell-Burt, P |
| collection | OXFORD |
| description | <p>Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases.</p> <p>An apparatus was designed and constructed to explore the conditions which give rise to these deposits by:</p> <p>i) The detection of the excited species such as CF and CF<sub>2</sub> (by optical emission spectroscopy);</p> <p>and</p> <p>ii) The rate of accumulation or removal of deposits (by means of a quartz crystal microbalance).</p> <p>The gases CF<sub>4</sub>, C<sub>2</sub>F<sub>6</sub>, C<sub>3</sub>F<sub>8</sub> and CHF<sub>3</sub> were used at pressures between 200-600mT, together with mixtures with H<sub>2</sub> and a few runs with other gases to vary the partial pressures of etching and polymerizing species. Both substrate effect of, viz silicon and thermally oxidised silicon (SiO<sub>2</sub>), and electrode materials effects have been examined.</p> <p>Polymer production from C<sub>3</sub>F<sub>8</sub> has been found to be more sensitive to electrode composition than that from CHF<sub>3</sub>, but the material formed is overall less thermally stable. On the other hand, polymers produced from C<sub>3</sub>F<sub>8</sub> accumulate at similar rates on Si and SiO<sub>2</sub>, whereas those from CHF3 show a much greater liklihood of building up on Si than SiO2 . XPS and infra-red spectroscopy have been used to demonstrate that polymers arising from these two gases exhibit marked structural differences, which can be minimised by mixing H<sub>2</sub> with C<sub>3</sub>F<sub>8</sub>. These effects can be correlated with the decomposition products expected in the plasma.</p> |
| first_indexed | 2024-03-07T05:03:07Z |
| format | Thesis |
| id | oxford-uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:03:07Z |
| publishDate | 1987 |
| record_format | dspace |
| spelling | oxford-uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c2022-03-27T08:52:40ZStudies on etching and polymer deposition in halocarbon plasmasThesishttp://purl.org/coar/resource_type/c_db06uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445cHalocarbonsEtchingPlasma etchingEnglishPolonsky Theses Digitisation Project1987Astell-Burt, PAstell-Burt, Peter J.Cheetham, ACheetham, A<p>Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases.</p> <p>An apparatus was designed and constructed to explore the conditions which give rise to these deposits by:</p> <p>i) The detection of the excited species such as CF and CF<sub>2</sub> (by optical emission spectroscopy);</p> <p>and</p> <p>ii) The rate of accumulation or removal of deposits (by means of a quartz crystal microbalance).</p> <p>The gases CF<sub>4</sub>, C<sub>2</sub>F<sub>6</sub>, C<sub>3</sub>F<sub>8</sub> and CHF<sub>3</sub> were used at pressures between 200-600mT, together with mixtures with H<sub>2</sub> and a few runs with other gases to vary the partial pressures of etching and polymerizing species. Both substrate effect of, viz silicon and thermally oxidised silicon (SiO<sub>2</sub>), and electrode materials effects have been examined.</p> <p>Polymer production from C<sub>3</sub>F<sub>8</sub> has been found to be more sensitive to electrode composition than that from CHF<sub>3</sub>, but the material formed is overall less thermally stable. On the other hand, polymers produced from C<sub>3</sub>F<sub>8</sub> accumulate at similar rates on Si and SiO<sub>2</sub>, whereas those from CHF3 show a much greater liklihood of building up on Si than SiO2 . XPS and infra-red spectroscopy have been used to demonstrate that polymers arising from these two gases exhibit marked structural differences, which can be minimised by mixing H<sub>2</sub> with C<sub>3</sub>F<sub>8</sub>. These effects can be correlated with the decomposition products expected in the plasma.</p> |
| spellingShingle | Halocarbons Etching Plasma etching Astell-Burt, P Astell-Burt, Peter J. Studies on etching and polymer deposition in halocarbon plasmas |
| title | Studies on etching and polymer deposition in halocarbon plasmas |
| title_full | Studies on etching and polymer deposition in halocarbon plasmas |
| title_fullStr | Studies on etching and polymer deposition in halocarbon plasmas |
| title_full_unstemmed | Studies on etching and polymer deposition in halocarbon plasmas |
| title_short | Studies on etching and polymer deposition in halocarbon plasmas |
| title_sort | studies on etching and polymer deposition in halocarbon plasmas |
| topic | Halocarbons Etching Plasma etching |
| work_keys_str_mv | AT astellburtp studiesonetchingandpolymerdepositioninhalocarbonplasmas AT astellburtpeterj studiesonetchingandpolymerdepositioninhalocarbonplasmas |