Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure

We have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fi...

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Autori principali: Smith, J, Klipstein, P, Grey, R, Hill, G
Natura: Journal article
Lingua:English
Pubblicazione: 1998
_version_ 1826299633662427136
author Smith, J
Klipstein, P
Grey, R
Hill, G
author_facet Smith, J
Klipstein, P
Grey, R
Hill, G
author_sort Smith, J
collection OXFORD
description We have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fields up to 15 T, reveal clear field dependences of resonances originating from the Xt(1)→Xt(1) and Xt(1)→Xt(2) tunneling processes. Their behavior is consistent with a Lorenz force analysis, and therefore probes the in-plane electron dispersion around the X minima. Differences between measurements with the magnetic field oriented parallel to the [100] and [110] crystal axes reflect the anisotropy of the X minima, a first analysis indicating that the field dependence is dominated by the two Xt minima with large wave vectors perpendicular to the magnetic-field direction. In support of this, Schrödinger-Poisson modeling of the shift in bias position of the Xt(1) →Xt(2) resonance provides a value for the effective mass parallel to the Lorenz in-plane momentum vector which is consistent with the heavy principal effective mass of the X minima.
first_indexed 2024-03-07T05:04:55Z
format Journal article
id oxford-uuid:d9986949-78ef-492a-9856-4a4b563a796f
institution University of Oxford
language English
last_indexed 2024-03-07T05:04:55Z
publishDate 1998
record_format dspace
spelling oxford-uuid:d9986949-78ef-492a-9856-4a4b563a796f2022-03-27T08:56:59ZMagnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressureJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d9986949-78ef-492a-9856-4a4b563a796fEnglishSymplectic Elements at Oxford1998Smith, JKlipstein, PGrey, RHill, GWe have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fields up to 15 T, reveal clear field dependences of resonances originating from the Xt(1)→Xt(1) and Xt(1)→Xt(2) tunneling processes. Their behavior is consistent with a Lorenz force analysis, and therefore probes the in-plane electron dispersion around the X minima. Differences between measurements with the magnetic field oriented parallel to the [100] and [110] crystal axes reflect the anisotropy of the X minima, a first analysis indicating that the field dependence is dominated by the two Xt minima with large wave vectors perpendicular to the magnetic-field direction. In support of this, Schrödinger-Poisson modeling of the shift in bias position of the Xt(1) →Xt(2) resonance provides a value for the effective mass parallel to the Lorenz in-plane momentum vector which is consistent with the heavy principal effective mass of the X minima.
spellingShingle Smith, J
Klipstein, P
Grey, R
Hill, G
Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
title Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
title_full Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
title_fullStr Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
title_full_unstemmed Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
title_short Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
title_sort magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse x electrons in gaas alas double barrier structures under hydrostatic pressure
work_keys_str_mv AT smithj magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure
AT klipsteinp magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure
AT greyr magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure
AT hillg magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure