Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
We have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fi...
Autori principali: | , , , |
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Natura: | Journal article |
Lingua: | English |
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1998
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_version_ | 1826299633662427136 |
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author | Smith, J Klipstein, P Grey, R Hill, G |
author_facet | Smith, J Klipstein, P Grey, R Hill, G |
author_sort | Smith, J |
collection | OXFORD |
description | We have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fields up to 15 T, reveal clear field dependences of resonances originating from the Xt(1)→Xt(1) and Xt(1)→Xt(2) tunneling processes. Their behavior is consistent with a Lorenz force analysis, and therefore probes the in-plane electron dispersion around the X minima. Differences between measurements with the magnetic field oriented parallel to the [100] and [110] crystal axes reflect the anisotropy of the X minima, a first analysis indicating that the field dependence is dominated by the two Xt minima with large wave vectors perpendicular to the magnetic-field direction. In support of this, Schrödinger-Poisson modeling of the shift in bias position of the Xt(1) →Xt(2) resonance provides a value for the effective mass parallel to the Lorenz in-plane momentum vector which is consistent with the heavy principal effective mass of the X minima. |
first_indexed | 2024-03-07T05:04:55Z |
format | Journal article |
id | oxford-uuid:d9986949-78ef-492a-9856-4a4b563a796f |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T05:04:55Z |
publishDate | 1998 |
record_format | dspace |
spelling | oxford-uuid:d9986949-78ef-492a-9856-4a4b563a796f2022-03-27T08:56:59ZMagnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressureJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d9986949-78ef-492a-9856-4a4b563a796fEnglishSymplectic Elements at Oxford1998Smith, JKlipstein, PGrey, RHill, GWe have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fields up to 15 T, reveal clear field dependences of resonances originating from the Xt(1)→Xt(1) and Xt(1)→Xt(2) tunneling processes. Their behavior is consistent with a Lorenz force analysis, and therefore probes the in-plane electron dispersion around the X minima. Differences between measurements with the magnetic field oriented parallel to the [100] and [110] crystal axes reflect the anisotropy of the X minima, a first analysis indicating that the field dependence is dominated by the two Xt minima with large wave vectors perpendicular to the magnetic-field direction. In support of this, Schrödinger-Poisson modeling of the shift in bias position of the Xt(1) →Xt(2) resonance provides a value for the effective mass parallel to the Lorenz in-plane momentum vector which is consistent with the heavy principal effective mass of the X minima. |
spellingShingle | Smith, J Klipstein, P Grey, R Hill, G Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure |
title | Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure |
title_full | Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure |
title_fullStr | Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure |
title_full_unstemmed | Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure |
title_short | Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure |
title_sort | magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse x electrons in gaas alas double barrier structures under hydrostatic pressure |
work_keys_str_mv | AT smithj magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure AT klipsteinp magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure AT greyr magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure AT hillg magnetotunnelingspectroscopywiththefieldperpendiculartothetunnelingdirectionofthetransversexelectronsingaasalasdoublebarrierstructuresunderhydrostaticpressure |