Aberration-corrected HREM/STEM for semiconductor research
Aberration correction leads to a substantial improvement in the resolution of transmission electron microscopes. The JEM-2200FS in Oxford (Begbroke site) is equipped with correctors for both TEM and STEM. Alignment of the TEM and STEM correctors is achieved through variations of the Zemlin tableaux....
| Main Authors: | , , , , , |
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| Format: | Conference item |
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2005
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| _version_ | 1797098268216262656 |
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| author | Hetherington, C Cockayne, D Doole, R Hutchison, J Kirkland, A Titchmarsh, J |
| author_facet | Hetherington, C Cockayne, D Doole, R Hutchison, J Kirkland, A Titchmarsh, J |
| author_sort | Hetherington, C |
| collection | OXFORD |
| description | Aberration correction leads to a substantial improvement in the resolution of transmission electron microscopes. The JEM-2200FS in Oxford (Begbroke site) is equipped with correctors for both TEM and STEM. Alignment of the TEM and STEM correctors is achieved through variations of the Zemlin tableaux. The microscope can be used to study the same or similar regions of a sample in both TEM and STEM modes. |
| first_indexed | 2024-03-07T05:07:08Z |
| format | Conference item |
| id | oxford-uuid:da4e8752-fb94-4291-b4ac-dfd3432eb63d |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:07:08Z |
| publishDate | 2005 |
| record_format | dspace |
| spelling | oxford-uuid:da4e8752-fb94-4291-b4ac-dfd3432eb63d2022-03-27T09:02:24ZAberration-corrected HREM/STEM for semiconductor researchConference itemhttp://purl.org/coar/resource_type/c_5794uuid:da4e8752-fb94-4291-b4ac-dfd3432eb63dSymplectic Elements at Oxford2005Hetherington, CCockayne, DDoole, RHutchison, JKirkland, ATitchmarsh, JAberration correction leads to a substantial improvement in the resolution of transmission electron microscopes. The JEM-2200FS in Oxford (Begbroke site) is equipped with correctors for both TEM and STEM. Alignment of the TEM and STEM correctors is achieved through variations of the Zemlin tableaux. The microscope can be used to study the same or similar regions of a sample in both TEM and STEM modes. |
| spellingShingle | Hetherington, C Cockayne, D Doole, R Hutchison, J Kirkland, A Titchmarsh, J Aberration-corrected HREM/STEM for semiconductor research |
| title | Aberration-corrected HREM/STEM for semiconductor research |
| title_full | Aberration-corrected HREM/STEM for semiconductor research |
| title_fullStr | Aberration-corrected HREM/STEM for semiconductor research |
| title_full_unstemmed | Aberration-corrected HREM/STEM for semiconductor research |
| title_short | Aberration-corrected HREM/STEM for semiconductor research |
| title_sort | aberration corrected hrem stem for semiconductor research |
| work_keys_str_mv | AT hetheringtonc aberrationcorrectedhremstemforsemiconductorresearch AT cockayned aberrationcorrectedhremstemforsemiconductorresearch AT dooler aberrationcorrectedhremstemforsemiconductorresearch AT hutchisonj aberrationcorrectedhremstemforsemiconductorresearch AT kirklanda aberrationcorrectedhremstemforsemiconductorresearch AT titchmarshj aberrationcorrectedhremstemforsemiconductorresearch |