Imaging nonradiative point defects buried in quantum wells using cathodoluminescence
<p>Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QWs has so far not been demonstrated...
| Main Authors: | , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2021
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| _version_ | 1797099177795125248 |
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| author | Weatherley, TFK Liu, W Osokin, V Alexander, DTL Taylor, RA Carlin, J-F Butté, R Grandjean, N |
| author_facet | Weatherley, TFK Liu, W Osokin, V Alexander, DTL Taylor, RA Carlin, J-F Butté, R Grandjean, N |
| author_sort | Weatherley, TFK |
| collection | OXFORD |
| description |
<p>Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyze nonradiative PDs in InGaN/GaN QWs at the nanoscale. We identify two different types of PDs by their contrasting behavior with temperature and measure their densities from 10<sup>14</sup> cm<sup>–3</sup> to as high as 10<sup>16</sup> cm<sup>–3</sup>. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the nonradiative behavior of PDs. The results in this study are readily interpreted directly from CL images and represent a significant advancement in nanoscale PD analysis.</p> |
| first_indexed | 2024-03-07T05:19:59Z |
| format | Journal article |
| id | oxford-uuid:de8da12b-8b66-4562-af9e-b7c9b01a5e11 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:19:59Z |
| publishDate | 2021 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:de8da12b-8b66-4562-af9e-b7c9b01a5e112022-03-27T09:33:02ZImaging nonradiative point defects buried in quantum wells using cathodoluminescenceJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:de8da12b-8b66-4562-af9e-b7c9b01a5e11EnglishSymplectic ElementsAmerican Chemical Society2021Weatherley, TFKLiu, WOsokin, VAlexander, DTLTaylor, RACarlin, J-FButté, RGrandjean, N <p>Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyze nonradiative PDs in InGaN/GaN QWs at the nanoscale. We identify two different types of PDs by their contrasting behavior with temperature and measure their densities from 10<sup>14</sup> cm<sup>–3</sup> to as high as 10<sup>16</sup> cm<sup>–3</sup>. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the nonradiative behavior of PDs. The results in this study are readily interpreted directly from CL images and represent a significant advancement in nanoscale PD analysis.</p> |
| spellingShingle | Weatherley, TFK Liu, W Osokin, V Alexander, DTL Taylor, RA Carlin, J-F Butté, R Grandjean, N Imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
| title | Imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
| title_full | Imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
| title_fullStr | Imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
| title_full_unstemmed | Imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
| title_short | Imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
| title_sort | imaging nonradiative point defects buried in quantum wells using cathodoluminescence |
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