Imaging nonradiative point defects buried in quantum wells using cathodoluminescence
<p>Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QWs has so far not been demonstrated...
Những tác giả chính: | Weatherley, TFK, Liu, W, Osokin, V, Alexander, DTL, Taylor, RA, Carlin, J-F, Butté, R, Grandjean, N |
---|---|
Định dạng: | Journal article |
Ngôn ngữ: | English |
Được phát hành: |
American Chemical Society
2021
|
Những quyển sách tương tự
-
Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
Bằng: Pierre Lottigier, et al.
Được phát hành: (2023-09-01) -
Cathodoluminescence studies of point defects in aluminum nitride
Bằng: Zhengqian Lu, et al.
Được phát hành: (2023-03-01) -
Super-nonradiative states in fractal quantum systems
Bằng: Abramov Valeriy
Được phát hành: (2019-01-01) -
Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures
Bằng: Zhao, Zhibo, et al.
Được phát hành: (2021) -
Visualizing Nonradiative Mobile Defects in Organic–Inorganic Perovskite Materials
Bằng: Hentz, Olivia, et al.
Được phát hành: (2022)