TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC

TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC

Show other versions (1)

Bibliographic Details
Main Authors:	Qin, C, Roberts, S
Format:	Journal article
Published:	1989

Similar Items

TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC
by: Qin, C, et al.
Published: (1989)

TEM INVESTIGATION OF THE PLASTIC ZONE, DISLOCATION ROSETTES AND CRACKS AROUND VICKERS INDENTATIONS IN SILICON.
by: Samuels, J, et al.
Published: (1985)

DISLOCATIONS IN INDENTED GAALAS
by: Charsley, P, et al.
Published: (1989)

The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001)
by: Chia-Hsiu Hsu, et al.
Published: (2015-01-01)

Si doping superlattice structure on 6H-SiC(0001)
by: Li Lianbi, et al.
Published: (2017-01-01)

Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
by: C Xia, et al.
Published: (2014-01-01)

Indentation fracture toughness and surface flaw analysis of sintered alumina/SiC nanocomposites
by: Anya, C, et al.
Published: (1996)

Surface dislocation nucleation by wedge indenter contacts
by: Zhao, J, et al.
Published: (2012)

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
by: F Fromm, et al.
Published: (2013-01-01)

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
by: Andrew L Walter, et al.
Published: (2013-01-01)

Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
by: Xiaozhe Yang, et al.
Published: (2019-03-01)

FLOW AND FRACTURE PATTERNS AROUND INDENTATIONS IN BRITTLE SINGLE CRYSTALS.
by: Roberts, S, et al.
Published: (1986)

Calculating Study on Properties of Al (111)/6H-SiC (0001) Interfaces
by: Changqing Wang, et al.
Published: (2020-09-01)

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)
by: Christian Held, et al.
Published: (2012-02-01)

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification
by: M. Temmen, et al.
Published: (2013-10-01)

Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
by: P. D. Bentley, et al.
Published: (2021-02-01)

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
by: Mykola Telychko, et al.
Published: (2015-04-01)

An indentation model for erosive wear in Al2O3/SiC nanocomposites
by: Shapiro, I, et al.
Published: (2011)

TEM diffraction contrast images simulation of dislocations
by: WU, W., et al.
Published: (2022)

TEM diffraction contrast images simulation of dislocations
by: WU, W., et al.
Published: (2022)

Study on Indentation Experiments and Mechanical Behavior of RB-SiC
by: Cheng Fan, et al.
Published: (2017-01-01)

Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD
by: R. E. Beisenov, et al.
Published: (2013-01-01)

Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations
by: Kang Liu, et al.
Published: (2017-08-01)

Residual stress distributions around indentations and scratches in polycrystalline Al2O3 and Al2O3/SiC nanocomposites measured using fluorescence probes
by: Wu, H, et al.
Published: (2008)

TEM studies of misfit dislocations in strained-layer heterostructures
by: Zou, J, et al.
Published: (1994)

TEM study of dislocation structure in grain boundaries in metals
by: Kvam, Eric Peter
Published: (2005)

Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
by: Rafał Lewandków, et al.
Published: (2021-07-01)

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
by: Yakimova Rositza, et al.
Published: (2011-01-01)

INSTRUMENTED INDENTATION OF Al2O3-SiC NANOCOMPOSITES
by: Csehova, E, et al.
Published: (2011)

Investigation of the indentation size effect based on measurement of the geometrically necessary dislocation density by electron backscatter diffraction
by: Shota HASUNUMA, et al.
Published: (2018-04-01)

Alternate activation-annihilation of dislocations realizes the plasticity of sapphire during indentation
by: Junyun Chen, et al.
Published: (2024-03-01)

Dislocation Reaction Mechanism for Enhanced Strain Hardening in Crystal Nano-Indentations
by: Ronald W. Armstrong, et al.
Published: (2019-12-01)

Surface-acoustic-wave transducers for the extremely-high-frequency range using AlN/SiC(0001)
by: Takagaki, Y, et al.
Published: (2004)

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
by: Devynck, F, et al.
Published: (2007)

Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
by: Devynck, F, et al.
Published: (2007)

Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth: Mini-Review
by: Ivan Shtepliuk, et al.
Published: (2021-06-01)

ELECTRON DIFFRACTION STUDY OF GRAPHENE LAYERS STRUCTURE ON CONDUCTIVE AND SEMI-INSULATING 6H-SIC (0001) SUBSTRATES
by: I. S. Kotousova, et al.
Published: (2015-03-01)

INDENTATION LOAD-SIZE EFFECT IN Al2O3-SIC NANOCOMPOSITES
by: Csehova, E, et al.
Published: (2010)

Nano-indentation study of dislocation evolution in GaN-based laser diodes
by: Jingjing Chen, et al.
Published: (2024-03-01)

Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
by: Takuma Kobayashi, et al.
Published: (2017-04-01)