Registration of single quantum dots using cryogenic laser photolithography

Registration of single quantum dots using cryogenic laser photolithography

অন্যান্য সংস্করণ প্রদর্শন করুন (2)

We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum informati...

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গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: Lee, K, Green, A, Taylor, R, Sharp, D, Scrimgeour, J, Roche, O, Na, J, Jarjour, A, Turberfield, A, Brossard, F, Williams, D, Briggs, G
বিন্যাস: Journal article
ভাষা:English
প্রকাশিত: American Institute of Physics 2006
বিষয়গুলি:
Physics
Condensed Matter Physics
বিবরন
সংক্ষিপ্ত:We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum information processing. The quantum dot positions were registered with an estimated accuracy of 50 nm by fabricating metal alignment markers around them. Photoluminescence spectra from quantum dots before and after marker fabrication were identical except for a small redshift (~1 nm), probably introduced during the reactive ion etching.

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