Characterization of the interfacial toughness in a novel “GaN-on-Diamond” material for high-power RF devices
GaN thin film integrated to polycrystalline diamond substrates is a novel microwave transistor material with significantly improved heat dissipation capability. Due to the thermal and mechanical properties mismatch between GaN and diamond, a natural concern arises in terms of its interfacial stabili...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2019
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