Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light o...

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Автори: Pattanasattayavong, P, Rossbauer, S, Thomas, S, Labram, J, Snaith, H, Anthopoulos, T
Формат: Journal article
Мова:English
Опубліковано: 2012
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author Pattanasattayavong, P
Rossbauer, S
Thomas, S
Labram, J
Snaith, H
Anthopoulos, T
author_facet Pattanasattayavong, P
Rossbauer, S
Thomas, S
Labram, J
Snaith, H
Anthopoulos, T
author_sort Pattanasattayavong, P
collection OXFORD
description We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 6 and a maximum photoresponsivity on the order of 10 4 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors. © 2012 American Institute of Physics.
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spelling oxford-uuid:e07f66b9-291c-4635-9b64-be0ec5e30bfa2022-03-27T09:47:38ZSolution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivityJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e07f66b9-291c-4635-9b64-be0ec5e30bfaEnglishSymplectic Elements at Oxford2012Pattanasattayavong, PRossbauer, SThomas, SLabram, JSnaith, HAnthopoulos, TWe report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 6 and a maximum photoresponsivity on the order of 10 4 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors. © 2012 American Institute of Physics.
spellingShingle Pattanasattayavong, P
Rossbauer, S
Thomas, S
Labram, J
Snaith, H
Anthopoulos, T
Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity
title Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity
title_full Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity
title_fullStr Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity
title_full_unstemmed Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity
title_short Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity
title_sort solution processed dye sensitized zno phototransistors with extremely high photoresponsivity
work_keys_str_mv AT pattanasattayavongp solutionprocesseddyesensitizedznophototransistorswithextremelyhighphotoresponsivity
AT rossbauers solutionprocesseddyesensitizedznophototransistorswithextremelyhighphotoresponsivity
AT thomass solutionprocesseddyesensitizedznophototransistorswithextremelyhighphotoresponsivity
AT labramj solutionprocesseddyesensitizedznophototransistorswithextremelyhighphotoresponsivity
AT snaithh solutionprocesseddyesensitizedznophototransistorswithextremelyhighphotoresponsivity
AT anthopoulost solutionprocesseddyesensitizedznophototransistorswithextremelyhighphotoresponsivity