chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors
We have measured the nonlinear refractive index near half-bandgap (E(g)/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio of the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from E(g)/2. Efficient quadrature squeezing was obta...
| Main Authors: | , , , , |
|---|---|
| Format: | Conference item |
| Published: |
1996
|
| _version_ | 1797099688687566848 |
|---|---|
| author | Fox, A Dabbicco, M Baumberg, J Huttner, B Ryan, J |
| author_facet | Fox, A Dabbicco, M Baumberg, J Huttner, B Ryan, J |
| author_sort | Fox, A |
| collection | OXFORD |
| description | We have measured the nonlinear refractive index near half-bandgap (E(g)/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio of the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from E(g)/2. Efficient quadrature squeezing was obtained at a centre wavelength of 780 nm in ZnS and at 960 nm in ZnSe. The scheme we employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths. |
| first_indexed | 2024-03-07T05:27:14Z |
| format | Conference item |
| id | oxford-uuid:e0fb1cd0-7dcc-4312-85b3-16c10cdaf939 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:27:14Z |
| publishDate | 1996 |
| record_format | dspace |
| spelling | oxford-uuid:e0fb1cd0-7dcc-4312-85b3-16c10cdaf9392022-03-27T09:51:12Zchi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductorsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:e0fb1cd0-7dcc-4312-85b3-16c10cdaf939Symplectic Elements at Oxford1996Fox, ADabbicco, MBaumberg, JHuttner, BRyan, JWe have measured the nonlinear refractive index near half-bandgap (E(g)/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio of the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from E(g)/2. Efficient quadrature squeezing was obtained at a centre wavelength of 780 nm in ZnS and at 960 nm in ZnSe. The scheme we employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths. |
| spellingShingle | Fox, A Dabbicco, M Baumberg, J Huttner, B Ryan, J chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
| title | chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
| title_full | chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
| title_fullStr | chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
| title_full_unstemmed | chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
| title_short | chi((3)) nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductors |
| title_sort | chi 3 nonlinear susceptibility in ii vi compounds and applications for squeezed light generation in semiconductors |
| work_keys_str_mv | AT foxa chi3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT dabbiccom chi3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT baumbergj chi3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT huttnerb chi3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors AT ryanj chi3nonlinearsusceptibilityiniivicompoundsandapplicationsforsqueezedlightgenerationinsemiconductors |