Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes a...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2013
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| _version_ | 1826301105140662272 |
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| author | Joyce, H Docherty, C Yong, C Wong-Leung, J Gao, Q Paiman, S Tan, H Jagadish, C Lloyd-Hughes, J Herz, L Johnston, M IEEE |
| author_facet | Joyce, H Docherty, C Yong, C Wong-Leung, J Gao, Q Paiman, S Tan, H Jagadish, C Lloyd-Hughes, J Herz, L Johnston, M IEEE |
| author_sort | Joyce, H |
| collection | OXFORD |
| description | Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE. |
| first_indexed | 2024-03-07T05:27:20Z |
| format | Journal article |
| id | oxford-uuid:e103f550-fa3b-4aa7-bcb7-79745fead9f8 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:27:20Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:e103f550-fa3b-4aa7-bcb7-79745fead9f82022-03-27T09:51:26ZProbing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e103f550-fa3b-4aa7-bcb7-79745fead9f8EnglishSymplectic Elements at Oxford2013Joyce, HDocherty, CYong, CWong-Leung, JGao, QPaiman, STan, HJagadish, CLloyd-Hughes, JHerz, LJohnston, MIEEEOptical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE. |
| spellingShingle | Joyce, H Docherty, C Yong, C Wong-Leung, J Gao, Q Paiman, S Tan, H Jagadish, C Lloyd-Hughes, J Herz, L Johnston, M IEEE Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy |
| title | Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy |
| title_full | Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy |
| title_fullStr | Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy |
| title_full_unstemmed | Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy |
| title_short | Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy |
| title_sort | probing the critical electronic properties of iii v nanowires using optical pump terahertz probe spectroscopy |
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