Insulating states of a 2-dimensional electron-hole system in high magnetic field
We find that an InAs/GaSb based electron-hole system exhibits insulating behaviour when the numbers of occupied electron and hole Landau levels are equal. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display repr...
Main Authors: | Takashina, K, Nicholas, R, Kardynal, B, Mason, N, Maude, D, Portal, J |
---|---|
Format: | Conference item |
Published: |
2001
|
Similar Items
-
Edge effects in an insulating state of an electron-hole system in magnetic field
by: Takashina, K, et al.
Published: (2001) -
Insulating states of a broken-gap two-dimensional electron-hole system
by: Takashina, K, et al.
Published: (2003) -
Metal-insulator oscillations in a two-dimensional electron-hole system
by: Nicholas, R, et al.
Published: (2000) -
Quantum Hall and insulating states of a 2-D electron-hole system
by: Takashina, K, et al.
Published: (2003) -
Breakdown of the quantum Hall effect in an electron-hole system
by: Takashina, K, et al.
Published: (2001)