Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene
The electronic transport properties of organic field-effect transistors (OFET), constructed on the highly anisotropic semiconductor, tetramethyltetraselenafulvalene (TMTSF), were discussed. The results show that transport properties are largely dominated by small polaron formation. An intrinsic hopp...
| Hauptverfasser: | , , , |
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| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
2003
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| _version_ | 1826301179747893248 |
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| author | Nam, M Ardavan, A Cava, R Chaikin, P |
| author_facet | Nam, M Ardavan, A Cava, R Chaikin, P |
| author_sort | Nam, M |
| collection | OXFORD |
| description | The electronic transport properties of organic field-effect transistors (OFET), constructed on the highly anisotropic semiconductor, tetramethyltetraselenafulvalene (TMTSF), were discussed. The results show that transport properties are largely dominated by small polaron formation. An intrinsic hopping mechanism was found to govern the electronic transport in TMTSF OFETs. A maximum mobility of 0.2 cm 2/V s at room temperature was reported. |
| first_indexed | 2024-03-07T05:28:28Z |
| format | Journal article |
| id | oxford-uuid:e15eba19-face-41a6-a48c-6a8143c9a1fa |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:28:28Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | oxford-uuid:e15eba19-face-41a6-a48c-6a8143c9a1fa2022-03-27T09:53:56ZIntrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvaleneJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e15eba19-face-41a6-a48c-6a8143c9a1faEnglishSymplectic Elements at Oxford2003Nam, MArdavan, ACava, RChaikin, PThe electronic transport properties of organic field-effect transistors (OFET), constructed on the highly anisotropic semiconductor, tetramethyltetraselenafulvalene (TMTSF), were discussed. The results show that transport properties are largely dominated by small polaron formation. An intrinsic hopping mechanism was found to govern the electronic transport in TMTSF OFETs. A maximum mobility of 0.2 cm 2/V s at room temperature was reported. |
| spellingShingle | Nam, M Ardavan, A Cava, R Chaikin, P Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| title | Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| title_full | Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| title_fullStr | Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| title_full_unstemmed | Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| title_short | Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| title_sort | intrinsic electronic transport properties of organic field effect transitors based on single crystalline tetramethyltetraselenafulvalene |
| work_keys_str_mv | AT namm intrinsicelectronictransportpropertiesoforganicfieldeffecttransitorsbasedonsinglecrystallinetetramethyltetraselenafulvalene AT ardavana intrinsicelectronictransportpropertiesoforganicfieldeffecttransitorsbasedonsinglecrystallinetetramethyltetraselenafulvalene AT cavar intrinsicelectronictransportpropertiesoforganicfieldeffecttransitorsbasedonsinglecrystallinetetramethyltetraselenafulvalene AT chaikinp intrinsicelectronictransportpropertiesoforganicfieldeffecttransitorsbasedonsinglecrystallinetetramethyltetraselenafulvalene |