THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES

Bibliográfalaš dieđut
Váldodahkkit:	Zou, J, Cockayne, D
Materiálatiipa:	Journal article
Almmustuhtton:	1993

Geahča maid

Misfit dislocations nucleated from the surface in strained-layer heterostructures
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Almmustuhtton: (1996)

TEM studies of misfit dislocations in strained-layer heterostructures
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Almmustuhtton: (1994)

Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained-layer heterostructures
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MISFIT DISLOCATION GENERATION FROM DISSOCIATED THREADING DISLOCATIONS IN STRAINED-LAYER HETEROSTRUCTURES
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Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
Dahkki: Zou, J, et al.
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THEORETICAL CONSIDERATION OF EQUILIBRIUM DISSOCIATION GEOMETRIES OF 60-DEGREES MISFIT DISLOCATIONS IN SINGLE SEMICONDUCTOR HETEROSTRUCTURES
Dahkki: Zou, J, et al.
Almmustuhtton: (1995)

GLIDE OF MISFIT DISLOCATIONS THROUGH MULTILAYER HETEROSTRUCTURES
Dahkki: Zou, J, et al.
Almmustuhtton: (1994)

THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
Dahkki: Zou, J, et al.
Almmustuhtton: (1994)

Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
Dahkki: Zou, J, et al.
Almmustuhtton: (1996)

MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
Dahkki: Zou, J, et al.
Almmustuhtton: (1993)

EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
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Almmustuhtton: (1993)

MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
Dahkki: Zou, J, et al.
Almmustuhtton: (1994)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
Dahkki: Zou, J, et al.
Almmustuhtton: (1997)

Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures
Dahkki: Zou, J, et al.
Almmustuhtton: (1996)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
Dahkki: Zou, J, et al.
Almmustuhtton: (2002)

DISLOCATION GEOMETRIES IN SEMICONDUCTORS AND IN SEMICONDUCTOR HETEROSTRUCTURES
Dahkki: Cockayne, D, et al.
Almmustuhtton: (1991)

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
Dahkki: Zou, J, et al.
Almmustuhtton: (1997)

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
Dahkki: Russell, J, et al.
Almmustuhtton: (2000)

Misfit dislocation dipoles in coated fibrous composites
Dahkki: Wang, Xu, et al.
Almmustuhtton: (2016)

Misfits and dislocations of two-dimensional monolayer surfaces /
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PARTIAL SEPARATIONS OF EXTENDED ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN II-VI SEMICONDUCTORS
Dahkki: Lu, G, et al.
Almmustuhtton: (1986)

Stress and relief of misfit strain of Ge/Si(001)
Dahkki: Wedler, G, et al.
Almmustuhtton: (1998)

Statistical physics of dislocation nucleation by nanoindentation
Dahkki: Mason, Jeremy K. (Jeremy Kyle)
Almmustuhtton: (2006)

A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si
Dahkki: Hirsch, P
Almmustuhtton: (1997)

Effects of surface relaxation on electron channelling contrast images of misfit dislocations
Dahkki: Wilkinson, A, et al.
Almmustuhtton: (1994)

Transmission ion channeling analysis of isolated 60 degrees misfit dislocations
Dahkki: Breese, M, et al.
Almmustuhtton: (2005)

Surface dislocation nucleation by wedge indenter contacts
Dahkki: Zhao, J, et al.
Almmustuhtton: (2012)

Atomistics of defect nucleation and mobility : dislocations and twinning
Dahkki: Chang, Jinpeng, 1974-
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INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS
Dahkki: Cockayne, D, et al.
Almmustuhtton: (1969)

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations
Dahkki: Jia, Bo Wen, et al.
Almmustuhtton: (2016)

DISSOCIATION OF DISLOCATIONS IN SILICON
Dahkki: Ray, I, et al.
Almmustuhtton: (1971)

Stress-mediated reaction pathways for dislocation nucleation in copper
Dahkki: Boyer, Robert D. (Robert Damian), 1978-
Almmustuhtton: (2009)

ON THE HOMOGENEOUS NUCLEATION OF DISLOCATIONS DURING INTEGRATED-CIRCUIT PROCESSING
Dahkki: Vanhellemont, J, et al.
Almmustuhtton: (1989)

Surface dislocation nucleation from frictional sliding contacts
Dahkki: Ma, L, et al.
Almmustuhtton: (2008)

Surface dislocation nucleation from frictional sliding contacts
Dahkki: Ma, L, et al.
Almmustuhtton: (2008)

DISLOCATION-STRUCTURE AND MOTION IN CDS
Dahkki: Lu, G, et al.
Almmustuhtton: (1986)

OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
Dahkki: Ray, I, et al.
Almmustuhtton: (1970)

GLIDING DISSOCIATED DISLOCATIONS IN CDS
Dahkki: Cockayne, D, et al.
Almmustuhtton: (1980)

DISSOCIATION OF DISLOCATIONS IN DIAMOND
Dahkki: Pirouz, P, et al.
Almmustuhtton: (1983)

Ion irradiation of GeSi Si strained-layer heterostructures
Dahkki: Glasko, J, et al.
Almmustuhtton: (1999)