Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, re...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2006
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| _version_ | 1797100060355330048 |
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| author | Titova, L Hoang, T Jackson, H Smith, L Yarrison-Rice, J Kim, Y Joyce, H Tan, H Jagadish, C |
| author_facet | Titova, L Hoang, T Jackson, H Smith, L Yarrison-Rice, J Kim, Y Joyce, H Tan, H Jagadish, C |
| author_sort | Titova, L |
| collection | OXFORD |
| description | Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. © 2006 American Institute of Physics. |
| first_indexed | 2024-03-07T05:32:25Z |
| format | Journal article |
| id | oxford-uuid:e2b6596f-5d92-4d96-8573-a8db3fbc76b4 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:32:25Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:e2b6596f-5d92-4d96-8573-a8db3fbc76b42022-03-27T10:03:33ZTemperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowiresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e2b6596f-5d92-4d96-8573-a8db3fbc76b4EnglishSymplectic Elements at Oxford2006Titova, LHoang, TJackson, HSmith, LYarrison-Rice, JKim, YJoyce, HTan, HJagadish, CTemperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. © 2006 American Institute of Physics. |
| spellingShingle | Titova, L Hoang, T Jackson, H Smith, L Yarrison-Rice, J Kim, Y Joyce, H Tan, H Jagadish, C Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires |
| title | Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires |
| title_full | Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires |
| title_fullStr | Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires |
| title_full_unstemmed | Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires |
| title_short | Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires |
| title_sort | temperature dependence of photoluminescence from single core shell gaas algaas nanowires |
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