Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
InAs/GaSb strained layer superlattices have been grown by atmospheric pressure MOVPE and the growth conditions optimised by observing, in real time, the in-situ UV absorption of the alkyls in the growth chamber. The Raman scattering of folded longitudinal acoustic phonons in the superlattices has be...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Conference item |
| Published: |
1997
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| _version_ | 1797100070930219008 |
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| author | Booker, G Daly, M Klipstein, P Lakrimi, M Kuech, T Li, J Lyapin, S Mason, N Murgatroyd, I Portal, J Nicholas, R Symons, D Vicente, P Walker, P |
| author_facet | Booker, G Daly, M Klipstein, P Lakrimi, M Kuech, T Li, J Lyapin, S Mason, N Murgatroyd, I Portal, J Nicholas, R Symons, D Vicente, P Walker, P |
| author_sort | Booker, G |
| collection | OXFORD |
| description | InAs/GaSb strained layer superlattices have been grown by atmospheric pressure MOVPE and the growth conditions optimised by observing, in real time, the in-situ UV absorption of the alkyls in the growth chamber. The Raman scattering of folded longitudinal acoustic phonons in the superlattices has been used as a probe of the periodicity of the superlattice. Atomic force microscopy has also been used to give information about the final surface morphology and RMS roughness of the superlattices. By combining all three techniques, optimum conditions have been found for the growth of short period InAs/GaSb superlattices. These have been used to sandwich a long period superlattice designed for transport measurements. The use of the short period superlattices eliminated additional conducting layers at each end of the semimetallic superlattice and produced structures where the hole and electron densities are equal. Such structures exhibit a dramatic new quantum transport effect where the Hall resistance goes to zero at high pressures and low temperatures. |
| first_indexed | 2024-03-07T05:32:34Z |
| format | Conference item |
| id | oxford-uuid:e2c7f655-30c9-4cd5-9429-7bd1ea830020 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:32:34Z |
| publishDate | 1997 |
| record_format | dspace |
| spelling | oxford-uuid:e2c7f655-30c9-4cd5-9429-7bd1ea8300202022-03-27T10:04:00ZGrowth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactorConference itemhttp://purl.org/coar/resource_type/c_5794uuid:e2c7f655-30c9-4cd5-9429-7bd1ea830020Symplectic Elements at Oxford1997Booker, GDaly, MKlipstein, PLakrimi, MKuech, TLi, JLyapin, SMason, NMurgatroyd, IPortal, JNicholas, RSymons, DVicente, PWalker, PInAs/GaSb strained layer superlattices have been grown by atmospheric pressure MOVPE and the growth conditions optimised by observing, in real time, the in-situ UV absorption of the alkyls in the growth chamber. The Raman scattering of folded longitudinal acoustic phonons in the superlattices has been used as a probe of the periodicity of the superlattice. Atomic force microscopy has also been used to give information about the final surface morphology and RMS roughness of the superlattices. By combining all three techniques, optimum conditions have been found for the growth of short period InAs/GaSb superlattices. These have been used to sandwich a long period superlattice designed for transport measurements. The use of the short period superlattices eliminated additional conducting layers at each end of the semimetallic superlattice and produced structures where the hole and electron densities are equal. Such structures exhibit a dramatic new quantum transport effect where the Hall resistance goes to zero at high pressures and low temperatures. |
| spellingShingle | Booker, G Daly, M Klipstein, P Lakrimi, M Kuech, T Li, J Lyapin, S Mason, N Murgatroyd, I Portal, J Nicholas, R Symons, D Vicente, P Walker, P Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor |
| title | Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor |
| title_full | Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor |
| title_fullStr | Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor |
| title_full_unstemmed | Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor |
| title_short | Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor |
| title_sort | growth of inas gasb strained layer superlattices by movpe 3 use of uv absorption to monitor alkyl stability in the reactor |
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