Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor

InAs/GaSb strained layer superlattices have been grown by atmospheric pressure MOVPE and the growth conditions optimised by observing, in real time, the in-situ UV absorption of the alkyls in the growth chamber. The Raman scattering of folded longitudinal acoustic phonons in the superlattices has be...

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Detalhes bibliográficos
Principais autores: Booker, G, Daly, M, Klipstein, P, Lakrimi, M, Kuech, T, Li, J, Lyapin, S, Mason, N, Murgatroyd, I, Portal, J, Nicholas, R, Symons, D, Vicente, P, Walker, P
Formato: Conference item
Publicado em: 1997

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