Spin-polarized electronic reflections at metal-oxide interfaces

Spin-polarized electronic reflections at metal-oxide interfaces

The ultra-thin oxide tunnel barrier employed in magnetic tunnel junctions stack has to be of very high quality in terms of large scale homogeneity of its thickness and height parameters. For controlling precisely oxidation kinetic, we used spin valves as an oxidation progress probe. By measuring the...

Bibliografski detalji
Glavni autori:	Da Costa, V, Iovan, A, Ounadjela, K, Allen, W, Gregg, J, Dieny, B
Format:	Conference item
Izdano:	2002

Slični predmeti

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