Spin-polarized electronic reflections at metal-oxide interfaces

Spin-polarized electronic reflections at metal-oxide interfaces

The ultra-thin oxide tunnel barrier employed in magnetic tunnel junctions stack has to be of very high quality in terms of large scale homogeneity of its thickness and height parameters. For controlling precisely oxidation kinetic, we used spin valves as an oxidation progress probe. By measuring the...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Da Costa, V, Iovan, A, Ounadjela, K, Allen, W, Gregg, J, Dieny, B
Fformat:	Conference item
Cyhoeddwyd:	2002

Eitemau Tebyg

Spin polarized electronic reflections at metal-oxide interfaces: A technique for characterizing tunneling barriers in magnetic random access memory devices
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In situ real-time measurement for electron spin polarization in atomic spin gyroscopes
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Spin-Polarized 2D Electron Gas at the EuTiO<sub>3</sub>/EuO Interface
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Edge-channel transport and spin-polarized interface states in folded graphene ribbons
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Effect of Residual Carbon on Spin‐Polarized Coupling at a Graphene/Ferromagnet Interface
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Spin electronics - a review
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The influence of polarization on properties of the potential barrier at metal-ferroelectric interface
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Spin-Polarized Electron Transmission in DNA-Like Systems
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