High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells

High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells

We have studied the electric field distribution in p-i-n structures with multi-quantum wells (MQW) using the method of dopant (ionization potential) contrast in high resolution (with a cold field emission electron gun) scanning electron microscopy (HRSEM). The samples are GaAs-based ternary compound...

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Bibliographic Details
Main Authors:	Barkay, Z, Grunbaum, E, Shapira, Y, Wilshaw, P, Barnham, K, Bushnell, B, Ekins-Daukes, N, Mazzer, M
Format:	Conference item
Published:	2004

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