High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells
We have studied the electric field distribution in p-i-n structures with multi-quantum wells (MQW) using the method of dopant (ionization potential) contrast in high resolution (with a cold field emission electron gun) scanning electron microscopy (HRSEM). The samples are GaAs-based ternary compound...
| المؤلفون الرئيسيون: | , , , , , , , |
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| التنسيق: | Conference item |
| منشور في: |
2004
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