High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells

High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells

We have studied the electric field distribution in p-i-n structures with multi-quantum wells (MQW) using the method of dopant (ionization potential) contrast in high resolution (with a cold field emission electron gun) scanning electron microscopy (HRSEM). The samples are GaAs-based ternary compound...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों:	Barkay, Z, Grunbaum, E, Shapira, Y, Wilshaw, P, Barnham, K, Bushnell, B, Ekins-Daukes, N, Mazzer, M
स्वरूप:	Conference item
प्रकाशित:	2004

समान संसाधन

The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEM
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