Low temperature scintillation properties of Ga2O3
Gallium oxide has recently been identified as a promising scintillator. To assess its potential as a detector material for ionizing radiation at low temperatures, we measured the luminescence and scintillation properties of an undoped Ga2O3 crystal over the 7–295 K temperature range. The emission of...
| Main Authors: | , , , |
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| Format: | Journal article |
| Jezik: | English |
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AIP Publishing
2019
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| _version_ | 1826301573153685504 |
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| author | Mykhaylyk, VB Kraus, H Kapustianyk, V Rudko, M |
| author_facet | Mykhaylyk, VB Kraus, H Kapustianyk, V Rudko, M |
| author_sort | Mykhaylyk, VB |
| collection | OXFORD |
| description | Gallium oxide has recently been identified as a promising scintillator. To assess its potential as a detector material for ionizing radiation at low temperatures, we measured the luminescence and scintillation properties of an undoped Ga2O3 crystal over the 7–295 K temperature range. The emission of the crystal is due to the radiative decay of self-trapped excitons and donor-acceptor pairs and peaks at a wavelength of 380 nm. The scintillation light output of the undoped Ga2O3 increases with a decrease in temperature, reaching a maximum value of 19 300 ± 2200 ph/MeV at 50 K. The measured luminescence kinetics has a recombination character with specific decay time (τ0.1) increasing from 1 to 1.8 μs at cooling. Since radiative decay in the crystal competes with nonradiative processes, material optimization could lead to the scintillator achieving a yield of 40800 ph/MeV, a figure considered to be an upper limit. |
| first_indexed | 2024-03-07T05:34:27Z |
| format | Journal article |
| id | oxford-uuid:e366f334-7e09-4c5e-b51a-1f8715a19e9c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:34:27Z |
| publishDate | 2019 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | oxford-uuid:e366f334-7e09-4c5e-b51a-1f8715a19e9c2022-03-27T10:08:52ZLow temperature scintillation properties of Ga2O3Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e366f334-7e09-4c5e-b51a-1f8715a19e9cEnglishSymplectic Elements at OxfordAIP Publishing2019Mykhaylyk, VBKraus, HKapustianyk, VRudko, MGallium oxide has recently been identified as a promising scintillator. To assess its potential as a detector material for ionizing radiation at low temperatures, we measured the luminescence and scintillation properties of an undoped Ga2O3 crystal over the 7–295 K temperature range. The emission of the crystal is due to the radiative decay of self-trapped excitons and donor-acceptor pairs and peaks at a wavelength of 380 nm. The scintillation light output of the undoped Ga2O3 increases with a decrease in temperature, reaching a maximum value of 19 300 ± 2200 ph/MeV at 50 K. The measured luminescence kinetics has a recombination character with specific decay time (τ0.1) increasing from 1 to 1.8 μs at cooling. Since radiative decay in the crystal competes with nonradiative processes, material optimization could lead to the scintillator achieving a yield of 40800 ph/MeV, a figure considered to be an upper limit. |
| spellingShingle | Mykhaylyk, VB Kraus, H Kapustianyk, V Rudko, M Low temperature scintillation properties of Ga2O3 |
| title | Low temperature scintillation properties of Ga2O3 |
| title_full | Low temperature scintillation properties of Ga2O3 |
| title_fullStr | Low temperature scintillation properties of Ga2O3 |
| title_full_unstemmed | Low temperature scintillation properties of Ga2O3 |
| title_short | Low temperature scintillation properties of Ga2O3 |
| title_sort | low temperature scintillation properties of ga2o3 |
| work_keys_str_mv | AT mykhaylykvb lowtemperaturescintillationpropertiesofga2o3 AT kraush lowtemperaturescintillationpropertiesofga2o3 AT kapustianykv lowtemperaturescintillationpropertiesofga2o3 AT rudkom lowtemperaturescintillationpropertiesofga2o3 |