SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS

SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS

Bibliografiske detaljer
Main Authors:	Nicholas, R, Sarkar, C, Brunel, L, Huant, S, Portal, J, Razeghi, M, Chevrier, J, Massies, J, Cox, H
Format:	Journal article
Udgivet:	1985

Lignende værker

FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
af: Nicholas, R, et al.
Udgivet: (1985)

ELECTRON-OPTIC PHONON COUPLING IN GA0.47IN0.53AS BASED HETEROSTRUCTURES
af: Nicholas, R, et al.
Udgivet: (1986)

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE
af: Nicholas, R, et al.
Udgivet: (1982)

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
af: Gauthier, D, et al.
Udgivet: (1988)

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode
af: Ahmed A. M. El-Amir, et al.
Udgivet: (2018-11-01)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
af: Razeghi, M, et al.
Udgivet: (1986)

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
af: Richard D'Costa, Vijay, et al.
Udgivet: (2014)

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
af: Rogers, D, et al.
Udgivet: (1986)

OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS
af: Westland, D, et al.
Udgivet: (1987)

Local structure of Pb(Zr0.53Ti0.47)O-3
af: Baba-Kishi, K, et al.
Udgivet: (2014)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
af: Hu, Hailong., et al.
Udgivet: (2013)

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
af: Seung Heon Shin, et al.
Udgivet: (2022-12-01)

Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
af: Priyanka Agrwal, et al.
Udgivet: (2025-02-01)

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm
af: Mansur Mohammed Ali Gamel, et al.
Udgivet: (2021-04-01)

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
af: Yen-Ting Chen, et al.
Udgivet: (2012-03-01)

Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers
af: Zhejing Jiao, et al.
Udgivet: (2022-01-01)

650～700℃ LPE生长三元合金In<sub>0.53</sub>Ga<sub>0.47</sub>As/（100）Inp
af: 李树翔
Udgivet: (1988-01-01)

High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
af: Yang, Li, et al.
Udgivet: (2014)

Degradation mechanisms of the Pb1−хBaхZr0,53Ti0,47O3−δ ferroelectric structure
af: L. I. Hurski, et al.
Udgivet: (2020-11-01)

Multiferroic CoFe2O4-Pb(Zr0.53Ti0.47)O3 thick films for magnetoelectric application
af: Chen, Wei
Udgivet: (2012)

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
af: Sun, Handong, et al.
Udgivet: (2009)

Dark current investigation in individual planar In0.53Ga0.47As/InP detector and fine pixel-pitch array with spacing variations
af: Wenqi Wang, et al.
Udgivet: (2021-12-01)

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment
af: P. Huang, et al.
Udgivet: (2021-01-01)

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
af: Hyeon-Bhin Jo, et al.
Udgivet: (2018-07-01)

Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors
af: I. Kostakis, et al.
Udgivet: (2013-09-01)

Fabrication and Electrical Characterization of Lead-Free BiFe0.91(Mn0.47Ti0.53)0.09O3–BaTiO3 Ceramics
af: Nguyen Truong Tho
Udgivet: (2020-06-01)

Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr<sub>0.53</sub>Ti<sub>0.47</sub>)O<sub>3</sub> Thin Films
af: Jian He, et al.
Udgivet: (2019-09-01)

适用于长波长光纤通信的0.95～1.65μm In<sub>0.53</sub>Ga<sub>0.47</sub>As光电二极管
af: 沙延洪, et al.
Udgivet: (1982-01-01)

Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping
af: Sung Tae Yoo, et al.
Udgivet: (2019-07-01)

High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
af: S. Yoshida, et al.
Udgivet: (2017-01-01)

Dielectric relaxation and modulus spectroscopy analysis of (Na0.47 K0.47 Li0.06) NbO3 ceramics
af: Md Kashif Shamim, et al.
Udgivet: (2017-06-01)

Aerosol Deposited Polycrystalline PbZr<sub>0.53</sub>Ti<sub>0.47</sub>O<sub>3</sub> Thick Films with a Large Transverse Piezoelectric Coefficient
af: Long Teng, et al.
Udgivet: (2025-02-01)

Electrical properties and electromagnetic radiation characteristics of cement/Ba0.06Bi0.47Na0.47TiO3 composites
af: Kumar Amit, et al.
Udgivet: (2024-06-01)

Correlation between Optical Localization-State and Electrical Deep-Level State in In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Structure
af: Il-Ho Ahn, et al.
Udgivet: (2021-02-01)

Performance Analysis of TaSiO<sub>x</sub> Inspired Sub-10 nm Energy Efficient In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Tri-Gate Technology
af: Sarat K. Saluru, et al.
Udgivet: (2017-01-01)

FREQUENCY SHIFTED POLARON COUPLING IN GAINAS HETEROSTRUCTURES
af: Brunel, L, et al.
Udgivet: (1986)

ELECTRICAL-PHYSICAL AND DIELECTRIC PROPERTIES OF Pb<sub>0,85</sub>Zr<sub>0,53</sub>Ti<sub>0,47</sub>O<sub>3</sub> - Sr<sub>2</sub>FeMoO<sub>6-</sub><sub>δ </sub>COMPOSITES
af: A. L. Gurskii, et al.
Udgivet: (2019-06-01)

CYCLOTRON-RESONANCE AND POLARON EFFECTS IN A TWO-DIMENSIONAL ELECTRON-GAS IN GAINAS
af: Brummell, M, et al.
Udgivet: (1984)

Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As on a 300-mm Si Substrate
af: Walid Amir, et al.
Udgivet: (2020-01-01)

HARMONIC IMAGING STUDIES OF ILLUMINATION UNIFORMITY FOR 0.53-MU-ABLATIVE COMPRESSIONS
af: Aboites, V, et al.
Udgivet: (1984)