Electron beam induced current investigations of transition metal impurities at extended defects in silicon
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one o...
| المؤلفون الرئيسيون: | , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
Electrochemical Soc Inc
1995
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