Electron beam induced current investigations of transition metal impurities at extended defects in silicon

Electron beam induced current investigations of transition metal impurities at extended defects in silicon

The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one o...

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Autors principals:	Wilshaw, P, Fell, T
Format:	Journal article
Idioma:	English
Publicat:	Electrochemical Soc Inc 1995

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