Electron beam induced current investigations of transition metal impurities at extended defects in silicon

Electron beam induced current investigations of transition metal impurities at extended defects in silicon

The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one o...

Fuld beskrivelse

Bibliografiske detaljer
Main Authors:	Wilshaw, P, Fell, T
Format:	Journal article
Sprog:	English
Udgivet:	Electrochemical Soc Inc 1995

Lignende værker

Electron-beam-induced activity of defects in silicon
af: Wilshaw, P, et al.
Udgivet: (1994)

ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON
af: Wilshaw, P, et al.
Udgivet: (1994)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
af: Fell, T, et al.
Udgivet: (1993)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
af: Fell, T, et al.
Udgivet: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
af: Fell, T, et al.
Udgivet: (1991)

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
af: Wilshaw, P, et al.
Udgivet: (1997)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
af: Wilshaw, P, et al.
Udgivet: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
af: Wilshaw, P, et al.
Udgivet: (1989)

Impurity locking of dislocations in silicon
af: Giannattasio, A, et al.
Udgivet: (2004)

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON
af: Decoteau, M, et al.
Udgivet: (1992)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
af: Decoteau, M, et al.
Udgivet: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
af: Decoteau, M, et al.
Udgivet: (1991)

Defect reactions and impurity control in silicon
af: Zhao, Song, 1964-
Udgivet: (2005)

Impurity and defect mitigation for silicon photovoltaics
af: Martins, G
Udgivet: (2016)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
af: Decoteau, M, et al.
Udgivet: (1991)

Dislocation locking by nitrogen impurities in FZ-silicon
af: Giannattasio, A, et al.
Udgivet: (2003)

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
af: Fell, T, et al.
Udgivet: (1991)

Transition metal impurities in silicon: computational search for a semiconductor qubit
af: Cheng-Wei Lee, et al.
Udgivet: (2022-08-01)

AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS
af: Galloway, S, et al.
Udgivet: (1994)

Electron-beam-induced current study of dislocations in GaAs
af: Galloway, SA, et al.
Udgivet: (1994)

Transition metal impurities in semiconductors/
af: Omel'Yanovskii, E. M., et al.
Udgivet: (1986)

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
af: Sharifa B. Utamuradova, et al.
Udgivet: (2023-09-01)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
af: Fell, T, et al.
Udgivet: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
af: Fell, T, et al.
Udgivet: (1989)

'Semi-insulating' silicon using deep level impurity doping: problems and potential
af: Mallik, K, et al.
Udgivet: (2003)

High resolution deep level transient spectroscopy applied to extended defects in silicon
af: Evans-Freeman, J, et al.
Udgivet: (2005)

Imaging and quantifying carrier collection in silicon solar cells: a submicron study using electron beam induced current
af: Yu, M, et al.
Udgivet: (2020)

Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium
af: Khodjakbar S. Daliev, et al.
Udgivet: (2024-12-01)

Influence of growth impurities on thermal defect formation in monocrystalline silicon
af: Yu.V. Pavlovskyy, et al.
Udgivet: (2021-08-01)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
af: Zeng, Z, et al.
Udgivet: (2011)

First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties
af: Lin Zhang, et al.
Udgivet: (2022-07-01)

Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates
af: Mallik, K, et al.
Udgivet: (2011)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
af: Wilshaw, P, et al.
Udgivet: (1989)

Electronic conductivity in metal-graphene composites: the role of disordered carbon structures, defects, and impurities
af: K Nepal, et al.
Udgivet: (2024-01-01)

Impurity-driven metal-insulator transitions in holography
af: Yunseok Seo, et al.
Udgivet: (2023-06-01)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
af: Wilshaw, P, et al.
Udgivet: (1991)

Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon
af: Tweddle, D, et al.
Udgivet: (2018)

Investigation of Si Dendrites by Electron-Beam-Induced Current
af: Wei Yi, et al.
Udgivet: (2018-08-01)

Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
af: Sung Yean Yoon, et al.
Udgivet: (2013-01-01)

An SEM EBIC study of the electronic properties of dislocations in silicon
af: Wilshaw, P, et al.
Udgivet: (1984)