Electron beam induced current investigations of transition metal impurities at extended defects in silicon

Electron beam induced current investigations of transition metal impurities at extended defects in silicon

The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one o...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Wilshaw, P, Fell, T
Μορφή:	Journal article
Γλώσσα:	English
Έκδοση:	Electrochemical Soc Inc 1995

Παρόμοια τεκμήρια

Electron-beam-induced activity of defects in silicon
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1994)

ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1994)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1993)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1991)

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1997)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1989)

Impurity locking of dislocations in silicon
ανά: Giannattasio, A, κ.ά.
Έκδοση: (2004)

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON
ανά: Decoteau, M, κ.ά.
Έκδοση: (1992)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

Defect reactions and impurity control in silicon
ανά: Zhao, Song, 1964-
Έκδοση: (2005)

Impurity and defect mitigation for silicon photovoltaics
ανά: Martins, G
Έκδοση: (2016)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

Dislocation locking by nitrogen impurities in FZ-silicon
ανά: Giannattasio, A, κ.ά.
Έκδοση: (2003)

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
ανά: Fell, T, κ.ά.
Έκδοση: (1991)

Transition metal impurities in silicon: computational search for a semiconductor qubit
ανά: Cheng-Wei Lee, κ.ά.
Έκδοση: (2022-08-01)

AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS
ανά: Galloway, S, κ.ά.
Έκδοση: (1994)

Electron-beam-induced current study of dislocations in GaAs
ανά: Galloway, SA, κ.ά.
Έκδοση: (1994)

Transition metal impurities in semiconductors/
ανά: Omel'Yanovskii, E. M., κ.ά.
Έκδοση: (1986)

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
ανά: Sharifa B. Utamuradova, κ.ά.
Έκδοση: (2023-09-01)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1989)

'Semi-insulating' silicon using deep level impurity doping: problems and potential
ανά: Mallik, K, κ.ά.
Έκδοση: (2003)

High resolution deep level transient spectroscopy applied to extended defects in silicon
ανά: Evans-Freeman, J, κ.ά.
Έκδοση: (2005)

Imaging and quantifying carrier collection in silicon solar cells: a submicron study using electron beam induced current
ανά: Yu, M, κ.ά.
Έκδοση: (2020)

Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium
ανά: Khodjakbar S. Daliev, κ.ά.
Έκδοση: (2024-12-01)

Influence of growth impurities on thermal defect formation in monocrystalline silicon
ανά: Yu.V. Pavlovskyy, κ.ά.
Έκδοση: (2021-08-01)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
ανά: Zeng, Z, κ.ά.
Έκδοση: (2011)

First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties
ανά: Lin Zhang, κ.ά.
Έκδοση: (2022-07-01)

Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates
ανά: Mallik, K, κ.ά.
Έκδοση: (2011)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1989)

Electronic conductivity in metal-graphene composites: the role of disordered carbon structures, defects, and impurities
ανά: K Nepal, κ.ά.
Έκδοση: (2024-01-01)

Impurity-driven metal-insulator transitions in holography
ανά: Yunseok Seo, κ.ά.
Έκδοση: (2023-06-01)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1991)

Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon
ανά: Tweddle, D, κ.ά.
Έκδοση: (2018)

Investigation of Si Dendrites by Electron-Beam-Induced Current
ανά: Wei Yi, κ.ά.
Έκδοση: (2018-08-01)

Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
ανά: Sung Yean Yoon, κ.ά.
Έκδοση: (2013-01-01)

An SEM EBIC study of the electronic properties of dislocations in silicon
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1984)