Electron beam induced current investigations of transition metal impurities at extended defects in silicon
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one o...
| Հիմնական հեղինակներ: | , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
Electrochemical Soc Inc
1995
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