Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon
In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affects both the bulk and surface related lifetimes. We identify three key behaviors of the degradation mechanism; 1) a firing dependence for the extent of degradation, 2) the appearance of bulk degradation...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal article |
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Elsevier
2018
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| _version_ | 1826301776691724288 |
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| author | Chen, D Hamer, PG Kim, M Fung, TH Bourret-Sicotte, G Liu, S Chan, CE Ciesla, A Chen, R Abbott, MD Hallam, BJ Wenham, SR |
| author_facet | Chen, D Hamer, PG Kim, M Fung, TH Bourret-Sicotte, G Liu, S Chan, CE Ciesla, A Chen, R Abbott, MD Hallam, BJ Wenham, SR |
| author_sort | Chen, D |
| collection | OXFORD |
| description | In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affects both the bulk and surface related lifetimes. We identify three key behaviors of the degradation mechanism; 1) a firing dependence for the extent of degradation, 2) the appearance of bulk degradation when wafers are fired in the presence of a diffused emitter and 3) a firing related apparent surface degradation when wafers are fired in the absence of an emitter. We further report a defect capture cross-section ratio of σn/σp = 0.028 ± 0.003 for the defect in n-type. Utilizing our understanding of light and elevated temperature induced degradation (LeTID) in p-type silicon, we demonstrate that the degradation behaviors in both n-type and p-type silicon are closely correlated. In light of numerous reports on the involvement of hydrogen, the potential role of a hydrogen-induced degradation mechanism is discussed in both p- and n-type silicon, particularly in relation to the diffusion of hydrogen and influence of hydrogen-dopant interactions. |
| first_indexed | 2024-03-07T05:37:29Z |
| format | Journal article |
| id | oxford-uuid:e468f21e-dc3d-4a84-a28d-82452aa103f1 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:37:29Z |
| publishDate | 2018 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oxford-uuid:e468f21e-dc3d-4a84-a28d-82452aa103f12022-03-27T10:16:28ZHydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e468f21e-dc3d-4a84-a28d-82452aa103f1Symplectic Elements at OxfordElsevier2018Chen, DHamer, PGKim, MFung, THBourret-Sicotte, GLiu, SChan, CECiesla, AChen, RAbbott, MDHallam, BJWenham, SRIn this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affects both the bulk and surface related lifetimes. We identify three key behaviors of the degradation mechanism; 1) a firing dependence for the extent of degradation, 2) the appearance of bulk degradation when wafers are fired in the presence of a diffused emitter and 3) a firing related apparent surface degradation when wafers are fired in the absence of an emitter. We further report a defect capture cross-section ratio of σn/σp = 0.028 ± 0.003 for the defect in n-type. Utilizing our understanding of light and elevated temperature induced degradation (LeTID) in p-type silicon, we demonstrate that the degradation behaviors in both n-type and p-type silicon are closely correlated. In light of numerous reports on the involvement of hydrogen, the potential role of a hydrogen-induced degradation mechanism is discussed in both p- and n-type silicon, particularly in relation to the diffusion of hydrogen and influence of hydrogen-dopant interactions. |
| spellingShingle | Chen, D Hamer, PG Kim, M Fung, TH Bourret-Sicotte, G Liu, S Chan, CE Ciesla, A Chen, R Abbott, MD Hallam, BJ Wenham, SR Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon |
| title | Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon |
| title_full | Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon |
| title_fullStr | Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon |
| title_full_unstemmed | Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon |
| title_short | Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon |
| title_sort | hydrogen induced degradation a possible mechanism for light and elevated temperature induced degradation in n type silicon |
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