Direct-write non-linear photolithography for semiconductor nanowire characterization.

A practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-bea...

Ամբողջական նկարագրություն

Մատենագիտական մանրամասներ
Հիմնական հեղինակներ: Parkinson, P, Jiang, N, Gao, Q, Tan, H, Jagadish, C
Ձևաչափ: Journal article
Լեզու:English
Հրապարակվել է: IOP Publishing 2012
Նկարագրություն
Ամփոփում:A practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-beam lithography or focused ion-beam deposition have challenges in scaling, damage or complexity that can make a large statistical sample difficult. We present a direct laser-writing technique to allow rapid electrical contacting of nanowires on a large variety of substrates.