Direct-write non-linear photolithography for semiconductor nanowire characterization.
A practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-bea...
| Autors principals: | , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
IOP Publishing
2012
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| _version_ | 1826302100976435200 |
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| author | Parkinson, P Jiang, N Gao, Q Tan, H Jagadish, C |
| author_facet | Parkinson, P Jiang, N Gao, Q Tan, H Jagadish, C |
| author_sort | Parkinson, P |
| collection | OXFORD |
| description | A practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-beam lithography or focused ion-beam deposition have challenges in scaling, damage or complexity that can make a large statistical sample difficult. We present a direct laser-writing technique to allow rapid electrical contacting of nanowires on a large variety of substrates. |
| first_indexed | 2024-03-07T05:42:24Z |
| format | Journal article |
| id | oxford-uuid:e607877c-f743-48e4-8fd8-f0f77bc7865a |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:42:24Z |
| publishDate | 2012 |
| publisher | IOP Publishing |
| record_format | dspace |
| spelling | oxford-uuid:e607877c-f743-48e4-8fd8-f0f77bc7865a2022-03-27T10:28:18ZDirect-write non-linear photolithography for semiconductor nanowire characterization.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e607877c-f743-48e4-8fd8-f0f77bc7865aEnglishSymplectic Elements at OxfordIOP Publishing2012Parkinson, PJiang, NGao, QTan, HJagadish, CA practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-beam lithography or focused ion-beam deposition have challenges in scaling, damage or complexity that can make a large statistical sample difficult. We present a direct laser-writing technique to allow rapid electrical contacting of nanowires on a large variety of substrates. |
| spellingShingle | Parkinson, P Jiang, N Gao, Q Tan, H Jagadish, C Direct-write non-linear photolithography for semiconductor nanowire characterization. |
| title | Direct-write non-linear photolithography for semiconductor nanowire characterization. |
| title_full | Direct-write non-linear photolithography for semiconductor nanowire characterization. |
| title_fullStr | Direct-write non-linear photolithography for semiconductor nanowire characterization. |
| title_full_unstemmed | Direct-write non-linear photolithography for semiconductor nanowire characterization. |
| title_short | Direct-write non-linear photolithography for semiconductor nanowire characterization. |
| title_sort | direct write non linear photolithography for semiconductor nanowire characterization |
| work_keys_str_mv | AT parkinsonp directwritenonlinearphotolithographyforsemiconductornanowirecharacterization AT jiangn directwritenonlinearphotolithographyforsemiconductornanowirecharacterization AT gaoq directwritenonlinearphotolithographyforsemiconductornanowirecharacterization AT tanh directwritenonlinearphotolithographyforsemiconductornanowirecharacterization AT jagadishc directwritenonlinearphotolithographyforsemiconductornanowirecharacterization |