Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale
Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2013
|
| _version_ | 1797101171214647296 |
|---|---|
| author | Chan, C Reid, B Taylor, R Zhuang, Y Shields, P Allsopp, D Jia, W |
| author_facet | Chan, C Reid, B Taylor, R Zhuang, Y Shields, P Allsopp, D Jia, W |
| author_sort | Chan, C |
| collection | OXFORD |
| description | Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence spectra implies that the slower decay times are due to surface related localisation near the perimeter of the nanorods, resulting in a spatial separation of the recombining carriers at low excitation densities. © 2013 American Institute of Physics. |
| first_indexed | 2024-03-07T05:48:03Z |
| format | Journal article |
| id | oxford-uuid:e7e2bc2c-5ab4-471b-aff0-a1e76723d2b4 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:48:03Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:e7e2bc2c-5ab4-471b-aff0-a1e76723d2b42022-03-27T10:42:25ZOptical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scaleJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e7e2bc2c-5ab4-471b-aff0-a1e76723d2b4EnglishSymplectic Elements at Oxford2013Chan, CReid, BTaylor, RZhuang, YShields, PAllsopp, DJia, WTime-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence spectra implies that the slower decay times are due to surface related localisation near the perimeter of the nanorods, resulting in a spatial separation of the recombining carriers at low excitation densities. © 2013 American Institute of Physics. |
| spellingShingle | Chan, C Reid, B Taylor, R Zhuang, Y Shields, P Allsopp, D Jia, W Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale |
| title | Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale |
| title_full | Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale |
| title_fullStr | Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale |
| title_full_unstemmed | Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale |
| title_short | Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale |
| title_sort | optical studies of the surface effects from the luminescence of single gan ingan nanorod light emitting diodes fabricated on a wafer scale |
| work_keys_str_mv | AT chanc opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale AT reidb opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale AT taylorr opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale AT zhuangy opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale AT shieldsp opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale AT allsoppd opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale AT jiaw opticalstudiesofthesurfaceeffectsfromtheluminescenceofsingleganingannanorodlightemittingdiodesfabricatedonawaferscale |